Resistive gallium oxide-hydrogen sensor comprises a gas-sensitive layer with measuring structure and containing gallium oxide

摘要

Resistive gallium oxide-hydrogen sensor comprises a gas-sensitive layer with a measuring structure and containing gallium oxide; a silicon oxide filter layer doped with a metal oxide and covering the gas-sensitive layer; and a heating structure. Preferred Features: The metal oxide doping material has a specified concentration, preferably 3-300 mu m and consists of gallium oxide and aluminum oxide. The concentration of impurities in the silicon oxide filter layer with catalytically active materials is less than 100 ppm.