A process for the functionalization and passivation of the surface of silicon - wafers by electrochemical deposition of thin of organic layers

摘要

It is a method for electrochemical deposition of thin of organic layers - on silicon wafers is known, which has the drawback that the silicon surface by the corrosive effect of the hydrogen fluoride is roughened and thus the originally smooth surface is lost at atomic. Dollars a to the present method, the substance to the chemical etching exchanged against a weakly acidic electrolyte. The electrolyte is at a potential relative to the silicon - wafer is held, the negative in relation to the oxidation potential v.sub.ag. the tail of the surface of the silicon - wafer and has a positive effect with respect to a (macroscopic) hydrogen - bubble formation is. To the electrolyte, the dissolved organic compound was added, wherein the electrolyte to the complete deposition of the organic layer in the substantially the same potential is kept. Dollars a the method is suitable, for example, for the depositing of diazonium compounds.