A process for the functionalization and passivation of the surface of silicon - wafers by electrochemical deposition of thin of organic layers

摘要

Process for functionalizing and passivating the surface of silicon wafers comprises electrochemically depositing thin organic layers after a cleaning pretreatment; and removing the oxide layer by chemical etching to form a smooth surface. The substance for chemical etching is exchanged against an acidic electrolyte, the electrolyte is maintained under a potential opposite the wafer and a dissolved organic compound is added to the electrolyte. Preferably the addition of the electrolyte, the adjustment of the potential and the addition of the dissolved organic compound are carried out on after the other. The electrolyte is 0.01 molar sulfuric acid. (111)-silicon or p-doped silicon having a conductivity of 1-10 OMEGA .cm is used.