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Manufacturing method for dynamic random-access memory element with formation of memory cell field and control and evalaution circuit in vertically overlapping surface regions
Manufacturing method for dynamic random-access memory element with formation of memory cell field and control and evalaution circuit in vertically overlapping surface regions
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机译:在垂直重叠的表面区域中形成存储单元场并形成控制与回避电路的动态随机存取存储元件的制造方法
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摘要
The manufacturing method uses semiconductor technology for provision of at least one capacitor and transistor for a memory cell of a memory cell field (31), together with a control and evaluation circuit (21), positioned vertically above the memory cells of the memory cell field. The memory cell field and the control and evaluation circuit are incorporated in respective overlapping surface regions (2,3) which are at least partially coupled together. An Independent claim for a dynamic random-access memory element is also included.
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