Dynamic random-access semiconductor memory for personal digital assistant or mobile telephone has memory sub-unit with memory cell and associated pre-charge equalize circuit switched via control circuit

摘要

The memory has a memory sub-unit in provided by a memory cell in which a dataword is stored and which is coupled to a bit line (6) and an associated pre-charge/equalize circuit (32,14), switched on and off by a control circuit. The pre-charge/equalize circuit is switched on for pre-charging the bit line in the normal memory cell refreshing mode by a control signal with a first voltage level and is switched on for pre-charging the bit line during a normal memory cell accessing mode by a control signal with a second voltage level. An independent claim for a battery-operated device with a semiconductor memory is also included.