Gate contact formation method in deep trench based DRAM integrated circuit fabrication, involves forming bit line, substrate and gate contact openings on substrate using plasma doping

摘要

The array and periphery areas of a substrate (10) are concurrently etched to form bit line contact openings and substrate contact openings respectively using plasma doping. A dielectric layer covering semiconductor device structure provided on the substrate, is etched to form a gate contact opening. A conducting layer is filled into the openings so as to form contacts.