Producing p-n junctions in semiconductor involves moving conducting point electrode on predefined path over semiconductor while maintaining voltage dependent induced ion migration

摘要

The method involves using voltage-dependent induced ion migration in an electric field applied to the semiconductor between a metal base electrode and an electrically conducting point electrode that is moved continuously on at least one predefined write path over the surface of the semiconductor to write homogeneously structured positive and negative conducting regions. The voltage dependent induced ion migration is maintained as the write mode. The method involves using voltage-dependent induced ion migration in an electric field applied to the semiconductor (SC) between a metal base electrode (BE) and an electrically conducting point electrode (PE). The electrically conducting point electrode is moved continuously on at least one predefined write path (WC) over the surface of the semiconductor to write homogeneously structured positive and negative conducting regions, whereby the voltage dependent induced ion migration is maintained as the write mode.