首页> 外国专利> Process for the selective metallization of partial structures or regions comprises applying a conducting adhesive or producing a conducting path on a substrate, and selectively depositing metal on the conducting adhesive

Process for the selective metallization of partial structures or regions comprises applying a conducting adhesive or producing a conducting path on a substrate, and selectively depositing metal on the conducting adhesive

机译:用于部分结构或区域的选择性金属化的方法包括在基板上施加导电粘合剂或产生导电路径,以及在导电粘合剂上选择性地沉积金属

摘要

Process for the selective metallization of partial structures or regions comprises: applying a conducting adhesive or producing a conducting path on a substrate; and selectively depositing metal on the conducting adhesive. An Independent claim is also included for a device for the selective metallization of partial structures or regions comprising a dispensing arrangement having a metallizing device (3) for the integrated deposition of the metal. Preferred Features: The metallizing device has a pin (4) for producing a conducting path, a capillary arrangement (5) for applying and removing electrolyte materials and an electrode arrangement (6) for galvanically depositing metal.
机译:用于部分结构或区域的选择性金属化的方法包括:在衬底上施加导电粘合剂或产生导电路径;并选择性地在导电粘合剂上沉积金属。还包括用于局部结构或区域的选择性金属化的装置的独立权利要求,该装置包括具有金属化装置(3)的分配装置,该金属化装置(3)用于金属的整体沉积。优选的特征:金属化装置具有用于产生导电路径的销(4),用于施加和去除电解质材料的毛细管装置(5)以及用于电沉积金属的电极装置(6)。

著录项

  • 公开/公告号DE10206434A1

    专利类型

  • 公开/公告日2002-11-14

    原文格式PDF

  • 申请/专利权人 ISA CONDUCTIVE MICROSYSTEMS GMBH;

    申请/专利号DE2002106434

  • 发明设计人 MEINEN TOMAS;

    申请日2002-02-15

  • 分类号H05K1/11;H01L21/60;H01L21/768;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:14

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