Production of trench capacitor structures used for dynamic random access memories comprises forming deep trench openings in a first semiconductor structure, forming a trenched plate region, and further processing

摘要

Production of trench capacitor structures comprises: forming deep trench openings in first semiconductor structure; forming trenched plate region; dielectric node point layer; conducting storage node point plate structure; forming implantation region; connecting first and second semiconductor substrates; polishing and forming dynamic random access memory-transfer gate transistor elements. Production of trench capacitor structures comprises: forming deep trench openings having a wide diameter in a first semiconductor structure; forming a trenched plate region in a region of the first semiconductor structure; forming a dielectric node point layer (7) on the exposed surface of the trench openings; forming a conducting storage node point plate structure (6) in the openings; forming an implantation region in an upper side region of a second semiconductor region; connecting the second semiconductor substrate with the first semiconductor substrate; carrying out chemical-mechanical polishing to remove the lower side region of the second semiconductor substrate; and forming dynamic random access memory (DRAM)-transfer gate transistor elements. Preferred Features: The first semiconductor substrate is a p-type single crystalline silicon substrate. The trench openings have a depth of 6.5-7.5 mu m. The plate region is an n-type region formed from an arsenic-silicon dioxide glass layer by diffusion.