首页> 外国专利> Integrated memory has inverter stage between first (read) and second (write) data paths that activates memory in test mode and connects first and second data paths together in activated state

Integrated memory has inverter stage between first (read) and second (write) data paths that activates memory in test mode and connects first and second data paths together in activated state

机译:集成存储器在第一(读​​)和第二(写)数据路径之间具有反相器级,该级在测试模式下激活存储器,并在激活状态下将第一和第二数据路径连接在一起

摘要

The integrated memory has a memory cell field (3), a first data path (8-1,9-1) for reading data from the cell field, a second data path (6-1,9-1) for writing data to the cell field and an inverter stage (7-1) between the first and second data paths that activates the memory in test mode and connects the first and second data paths together in the activated state. AN Independent claim is also included for the following: a method of operating an inventive device.
机译:集成存储器具有存储单元字段(3),用于从单元字段读取数据的第一数据路径(8-1,9-1),用于将数据写至第二数据路径(6-1,9-1)。单元场和第一和第二数据路径之间的反相器级(7-1),其以测试模式激活存储器,并在激活状态下将第一和第二数据路径连接在一起。还包括以下内容的独立权利要求:一种操作本发明设备的方法。

著录项

  • 公开/公告号DE10214209A1

    专利类型

  • 公开/公告日2003-10-23

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2002114209

  • 发明设计人 OHLHOFF CARSTEN;

    申请日2002-03-28

  • 分类号G11C29/00;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:03

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