首页>
外国专利>
Non-volatile floating trap storage device comprises a semiconductor substrate, a tunnel insulation layer on the substrate, a charge storage layer, a barrier insulation layer, and a gate electrode
Non-volatile floating trap storage device comprises a semiconductor substrate, a tunnel insulation layer on the substrate, a charge storage layer, a barrier insulation layer, and a gate electrode
展开▼
机译:非易失性浮阱存储器件包括半导体衬底,衬底上的隧道绝缘层,电荷存储层,势垒绝缘层和栅电极
展开▼
页面导航
摘要
著录项
相似文献
摘要
Non-volatile floating trap storage device comprises a semiconductor substrate (10); a tunnel insulation layer (110) having a first dielectric constant on the substrate; a charge storage layer (112); a barrier insulation layer having a second dielectric constant which is larger than the first constant; and a gate electrode (117g). An Independent claim is also included for a process for the production of the non-volatile floating trap storage device. Preferred Features: The device further comprises a pair of impurity site doped layers in the substrate next to opposite lying sides of the gate electrode. The tunnel insulation layer contains silicon oxide. The blocking insulation layer comprises a metal oxide material doped with a group IV element, preferably zirconium (Zr), silicon (Si), titanium (Ti) or hafnium (Hf). The blocking insulation layer is made from alumina (Al2O3), tantalum pentoxide (Ta2O5), titania (TiO2), lead zirconate titanate (PZT), lead titanate (PbTiO3), lead zirconate (PbZrO3), lanthanum (La)-doped PZT, lead oxide (PbO), strontium titanate (SrTIO3), barium titanate (BaTiO3), BST, SBT or bismuth titanate (Bi4Ti3O12).
展开▼