Repair of phase shift mask for use in photolithography comprises devising imaginary correction pattern, etching surface of mask body, and depositing phase-shifting material in recess

摘要

A phase shift mask is repaired by devising an imaginary correction pattern on basis of patterned mask layer (103); etching a surface of mask body (101) adjacent the mask layer over a region corresponding to the imaginary correction pattern to form a recess (105a) in the mask body; and depositing a phase-shifting material in the recess to form a phase shifter in contact with the mask layer. An Independent claim is also included for a phase shift mask comprising mask body in form of transparent plate; mask layer including a pattern of opaque material disposed on the surface of the mask body; and correction pattern comprising recess in the surface of the mask body and shifter of phase-shifting material occupying the recess and disposed in contact with the mask layer.