首页> 外国专利> NAND flash memory device has registers for serially receiving address, command and output data of input buffer circuits based on respective lead signals from a control logic

NAND flash memory device has registers for serially receiving address, command and output data of input buffer circuits based on respective lead signals from a control logic

机译:NAND闪存设备具有用于基于来自控制逻辑的相应引导信号来串行接收输入缓冲电路的地址,命令和输出数据的寄存器。

摘要

An address register (150) receives address of an output signal of an input buffer circuit (160) based on an address load signal from a control logic (200). A command register receives a command output from the buffer circuit based on a command load signal from control logic. A data input register (190) receives simultaneously the outputs of buffer circuits (160,170) based on data load signal from the control logic. An independent claim is also included for non volatile memory operating method.
机译:地址寄存器(150)基于来自控制逻辑(200)的地址负载信号来接收输入缓冲电路(160)的输出信号的地址。命令寄存器基于来自控制逻辑的命令负载信号接收从缓冲电路输出的命令。数据输入寄存器(190)基于来自控制逻辑的数据负载信号同时接收缓冲电路(160,170)的输出。还包括针对非易失性存储器操作方法的独立权利要求。

著录项

  • 公开/公告号DE10301431A1

    专利类型

  • 公开/公告日2003-08-14

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号DE2003101431

  • 发明设计人 SUH KANG-DEOG;LEE YEONG-TAEK;

    申请日2003-01-14

  • 分类号G11C16/06;

  • 国家 DE

  • 入库时间 2022-08-21 23:41:46

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