首页> 外国专利> Material measure and calibrating norm for recording lateral dimensions on nano-scale objects for microscopy and linear measurement uses a measuring structure on a carrier surface.

Material measure and calibrating norm for recording lateral dimensions on nano-scale objects for microscopy and linear measurement uses a measuring structure on a carrier surface.

机译:用于在纳米级物体上记录横向尺寸以进行显微镜和线性测量的材料测量和校准规范,是在载体表面上使用测量结构。

摘要

A material measure (10) on a carrier surface (11) for a microchip (12) has a single structure (13) periodically repeating itself at certain times. Each period is associated with a single structure and a recess (14) of silicon with a clearance and the sloping sides (15,16) of these are undercut in an arched manner. Between a surface (17) for the single structures and their undercut sloping sides there are sharp exact limiting edges (18,19).
机译:用于微芯片(12)的载体表面(11)上的材料量度(10)具有单个结构(13),该结构在某些时间周期性地重复其自身。每个周期都与单个结构相关联,并且具有间隙的硅凹槽(14)的倾斜面(15,16)以拱形方式被底切。在单个结构的表面(17)和其底切倾斜侧面之间,有锋利的精确限制边缘(18,19)。

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