Brief description of the first embodiment, on a silicon substrate comprising zones highly doped boron

摘要

The invention relates to a method of deposition by epitaxy in the gaseous phase of silicon on a silicon substrate (1) on or in which there are areas (6, 7) containing the dopants at high concentration, boron, while avoiding an autodoping of the epitaxied layer by boron, comprising the step consisting in introducing a chlorinated gas, before the step of epitaxial deposition in order to etch the substrate to a thickness of less than 100 nm.