METHOD FOR MODELING AND PRODUCING AN INTEGRATED CIRCUIT COMPRISING AT LEAST ONE ISOLATED GRID FIELD EFFECT TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

摘要

The modeling device comprises processing means (MLB) capable of developing a parameter representative of the mechanical stresses applied to the active area of the transistor, and processing means (MT) capable of determining at least some of the electrical parameters (P) of the transistor taking this constraint parameter into account.