Method of manufacture of a circuit integrated comprising bipolar transistors, in particular a heterojunction if / sige, and a field effect transistors has gates isolated, and the corresponding circuit integrated

摘要

When the fabrication of the insulated gate field effect transistor is started, then the bipolar transistor (BIP1,BIP2) is totally fabricated, before the resumption of fabrication of the insulated gate field effect transistor (MOS), and the step of common finishing of the two transistors is executed, including the common thermal reheating treatment (122) and common silication treatment.