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METHOD OF MANUFACTURING CARBON NANOTUBE, CARBON NANOTUBE DEVICE AND ELECTRICAL DOUBLE LAYER CAPACITOR

机译:碳纳米管,碳纳米管装置和双电层电容器的制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a method of manufacturing carbon nanotube capable of forming a carbon nanotube by a simple process and of accomplishing mass-production and area-enlargement of the carbon nanotube, and to provide a carbon nanotube device and an electrical double layer capacitor using the same. PSOLUTION: A non-catalyst metallic layer 2 which comprises Ti as a main component is formed on a catalyst metal substrate 1 comprising a catalyst metal such as Ni, Co, Fe or the like by a film forming method such as an electron beam vapor deposition method and a sputtering method. Thus, the substrate 100 comprised of a laminate structure of the catalyst metal substrate 1 and the non-catalyst metallic layer 2 is formed. It is preferable that the film thickness of the non-catalyst metallic layer 2 is from 50 Å or more to 400 Å or less. The substrate 100 is set in a vessel of a heat CVD (chemical vapor deposition) apparatus and is heated in an atmosphere including a hydrocarbon gas as a raw material gas to grow the carbon nanotube on the non-catalyst metallic layer 2. PCOPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种制造碳纳米管的方法,该方法能够通过简单的工艺形成碳纳米管,并且能够完成碳纳米管的批量生产和面积扩大,并且提供一种碳纳米管器件和制造方法。双电层电容器使用相同。

解决方案:通过诸如电子的膜形成方法,在包含诸如Ni,Co,Fe等的催化剂金属的催化剂金属基板1上形成以Ti为主成分的非催化剂金属层2。束气相沉积法和溅射法。由此,形成由催化剂金属基板1和非催化剂金属层2的层叠结构构成的基板100。非催化剂金属层2的膜厚优选为50ang以上。或更多至400Å或更少。基板100被放置在热CVD(化学气相沉积)装置的容器中,并且在包括碳氢化合物气体作为原料气体的气氛中被加热,以使碳纳米管在非催化剂金属层2上生长。版权所有(C)2005,JPO&NCIPI

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