FINE PATTERN FORMING MATERIAL, FINE PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide a fine pattern forming material capable of forming a fine pattern exceeding the limit of the wavelength of light for exposure in photolithography and to provide a fine pattern forming method using the same and a method for manufacturing a semiconductor device. PSOLUTION: The fine pattern forming material comprises a water-soluble component which is cross-linkable by the presence of an acid, and water and/or a water-soluble organic solvent, wherein the water-soluble component is at least one selected from the group consisting of a water-soluble polymer, a water-soluble monomer, a water-soluble oligomer, a copolymer of a water-soluble monomer and salts of these. The fine pattern forming material is formed on a resist pattern 4 capable of supplying the acid and the water-soluble component causes a cross-linking reaction under the acid from the resist pattern 4 in parts in contact with the resist pattern 4 to form a water-or alkali-insoluble film 6. PCOPYRIGHT: (C)2004,JPO