SIGNAL VOLTAGE BOOSTING METHOD, SHARED SIGNAL GENERATING CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which current consumption by a shared signal is reduced.;SOLUTION: In the semiconductor memory device in which the signal voltage is boosted by switching a voltage boosting power source and an external power source when a sense operation and a pre-charge operation are performed, the time length in which boosting is performed by the external power source is varied depending on the sense operation and pre-charge operation.;COPYRIGHT: (C)2004,JPO