From the ultraviolet ray territory the back illumination type picture formation vessel which has the strengthening sensitivity to the near infrared rays territory

摘要

As for this invention the back illumination type image array device (10) and there is a method of producing its device. This device (10), usually, array circuitry layer (16) with front layer (14) with quartz layer (12) with it consists of. Array circuitry layer (16) front layer (14) it is demarcated to the surface of one side. Quartz layer (12) front layer (14) it is provided on the other surface. The method of producing this device usually consists of the below-mentioned process. Thick silicon layer (32), thick silicon layer (32) oxide layer above (34) and oxide layer (34) front silicon layer above (36) the wafer which it has (30) it offers this method. Front silicon layer (36) it approaches the 2nd surface to oxide layer with the 1st and 2nd surface. Array circuitry layer is formed to the 1st surface layer of front silicon layer. The array circuit (24) temporary layer (40) is provided on the surface. Thick silicon layer (32) and oxide layer (34) the wafer (30) from it is removed, it makes the 2nd surface of front silicon layer expose with that. Quartz layer is formed to the 2nd surface. Temporary layer (40) it is removed from the array surface.