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FIELD EMISSION TYPE ELECTRON SOURCE AND MANUFACTURING METHOD OF FIELD EMISSION TYPE ELECTRON SOURCE

机译:场发射型电子源及场发射型电子源的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a field emission type electron source in which variation within the surface of the electron emission characteristics is small compared with that of a conventional art, and its manufacturing method.;SOLUTION: A plurality of lower electrodes 12 are formed on one surface of a glass substrate 11 (Figure (a)), and an infrared reflecting film 13 is formed on the other surface side of the glass substrate 11 (Figure (b)). Then, while heating the glass substrate 11 from the other surface side, an undoped polycrystalline silicon layer 3 is formed on the one surface side of the glass substrate 11 (Figure (c)). After a first compound nano-crystalline layer in which numerous grains of polycrystalline silicon and numerous silicon microcrystals are intermingled is formed by a nano-crystallization process, the first compound nano-crystalline layer is oxidized electrochemically, and an intense-field drift layer 6 is formed (Figure (d)). Then, a surface electrode 7 made of gold thin film is formed (Figure (e)).;COPYRIGHT: (C)2004,JPO&NCIPI
机译:解决的问题:提供一种场发射型电子源及其制造方法,该场致发射型电子源的电子发射特性的表面内的波动与传统技术相比小;解决方案:形成多个下部电极12在玻璃基板11的一个表面上(图(a)),在玻璃基板11的另一表面侧上形成红外反射膜13(图(b))。然后,在从另一表面侧加热玻璃基板11的同时,在玻璃基板11的一个表面侧上形成未掺杂的多晶硅层3(图(c))。在通过纳米结晶工艺形成其中混有许多多晶硅晶粒和许多硅微晶的第一化合物纳米晶体层之后,第一化合物纳米晶体层被电化学氧化,并且强电场漂移层6为形成(图(d))。然后,形成由金薄膜制成的表面电极7(图(e))。;版权所有:(C)2004,JPO&NCIPI

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