首页> 外国专利> CARBON OXIDE THIN FILM, CARBON OXYNITRIDE THIN FILM AND DIAMOND-LIKE CARBON OXIDE THIN FILM AND METHOD FOR MANUFACTURING THESE CARBON OXIDE TYPE THIN FILMS

CARBON OXIDE THIN FILM, CARBON OXYNITRIDE THIN FILM AND DIAMOND-LIKE CARBON OXIDE THIN FILM AND METHOD FOR MANUFACTURING THESE CARBON OXIDE TYPE THIN FILMS

机译:碳氧薄膜,碳氧薄膜和钻石状碳氧薄膜以及制造这些碳氧型薄膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a new carbon oxide thin film, a new carbon oxynitride thin film and a new diamond-like carbon oxide thin film stable even in wet atmosphere and excellent in adhesive property to a substrate and suitability to microfabrication such as electron beam lithography and to provide a method for manufacturing those.;SOLUTION: The carbon oxide thin film, the carbon oxynitride thin film and the diamond-like carbon oxide thin film are manufactured by plasma-decomposing gaseous starting materials including CO in an inert gaseous atmosphere, sputtering a carbonaceous material with at least part of ions in the generated plasma-forming components, and depositing the reaction product of at least part of the plasma-forming components and sputtered carbon atoms on a substrate.;COPYRIGHT: (C)2004,JPO
机译:要解决的问题:提供新的碳氧化物薄膜,新的氧氮化碳薄膜和新的类金刚石碳氧化物薄膜,即使在潮湿的环境中也稳定,对基材的粘附性和对电子等微细加工的适应性极好解决方案:通过在惰性气体气氛中对包括CO在内的气态原料进行等离子体分解来制造碳氧化物薄膜,氧氮化碳薄膜和类金刚石碳氧化物薄膜。 ,溅射碳质材料,使生成的等离子体形成成分中至少具有离子的一部分,并在基板上沉积至少一部分等离子体形成成分与溅射碳原子的反应产物。;版权:(C)2004,日本特许厅

著录项

  • 公开/公告号JP2004107102A

    专利类型

  • 公开/公告日2004-04-08

    原文格式PDF

  • 申请/专利权人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE;

    申请/专利号JP20020268453

  • 发明设计人 NAKATANI ISAO;

    申请日2002-09-13

  • 分类号C01B31/00;C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-21 23:28:33

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