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Deposition of Ni-Based Thin Films in Supercritical Carbon Dioxide Solution Via Flow-Type Reaction System

机译:通过流式反应系统沉积超临界二氧化碳溶液中的基于Ni基薄膜

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Ni-based films have been extensively studied owing to their potential application in several fields such as metal coatings, microelectronic devices, magnetic devices, and catalysis. One of the techniques to deposit Ni thin films is supercritical fluid chemical deposition (SFCD) that offers the potential for the capability of high conformal step coverages and high-aspect-ratio features at materials dimensions. This technique includes the dissolution of precursor in supercritical fluids, adsorption of precursor and reducing agent onto the substrate surface, the reaction between adsorbed precursor and a reducing agent to its metal or metal oxide form on the substrate surface, and desorption of hydrogenated ligands from the substrate into the supercritical fluids phase. These process steps typically proceed under supercritical carbon dioxide (scCO_2) solution due to its relatively moderate critical temperature (31.1°C) and pressure (7.38 MPa) that has high molecular density, high diffusivity, low viscosity and zero surface tension.
机译:由于它们在诸如金属涂层,微电子器件,磁性装置和催化之类的若干领域中,基于Ni的薄膜已经过度研究。沉积Ni薄膜的技术之一是超临界流体化学沉积(SFCD),其提供了高保形步进覆盖物的能力和材料尺寸的高纵横比特征。该技术包括在超临界流体中的前体溶解,前体和还原剂在基板表面上吸附,吸附前体和还原剂与其金属或金属氧化物形式之间的反应在基材表面上,以及来自氢化配体的解吸基板进入超临界流体相。这些工艺步骤通常在超临界二氧化碳(SCCO_2)溶液下进行,由于其具有高分子密度,高扩散度,低粘度和零表面张力的高分临界温度(31.1℃)和压力(7.38MPa)。

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