Electroplating chemistry to copper fill the irregularities of submicron VLSI / ULSI wiring

摘要

On the plating method of the substrate used to the bath and the copper plating bath. Method using it with the bath, Ya semiconductor wafer VLSI formed by filling plated copper void-free for the circuit for forming irregularities of the wiring groove, and other via-holes of 0.2μm less than with a high aspect ratio It is particularly effective for plating electronic devices such as ULSI wiring. Copper bath and mixed polyoxyethylene polyhydric alcohol block copolymers of polyoxyethylene organic divalent sulfur compounds soluble in the bath, polyoxyethylene, and polyoxypropylene derivatives, and polyoxyethylene polyhydric alcohol I include soluble polyether compound to the bath, such as polyoxypropylene derivatives. The preferred polyether compound is a polyoxypropylene derivatives and mixtures of polyoxyethylene glycerin. The preferred copper bath also includes a pyridine compound derivatives.