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SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, OPTICAL FIBER AMPLIFIER, AND METHOD FOR SELECTING SEMICONDUCTOR LASER DEVICE
SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, OPTICAL FIBER AMPLIFIER, AND METHOD FOR SELECTING SEMICONDUCTOR LASER DEVICE
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机译:半导体激光器件,半导体激光模块,光纤放大器以及选择半导体激光器件的方法
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摘要
PROBLEM TO BE SOLVED: To obtain a semiconductor laser device prevented from generating induced Brillouin scattering.;SOLUTION: An n-InP buffer layer 2, a GRIN-SCH-MQW active layer 3 and a p-InP spacer layer 4 are laminated on the surface of an n-InP substrate 1. A p-InP blocking layer 8 and an n-InP blocking layer 9 are laminated adjacently to the upper region of the buffer layer 2, the active layer 3 and the spacer layer 4. A p-InP clad layer 6, a p-GaInAsP contact layer 7 and a p-side electrode 10 are laminated on the spacer layer 4 and the blocking layer 9, and an n-side electrode 11 is arranged on the rear surface of the substrate 1. A diffraction grating 13 is arranged in the spacer layer 4 to select light having ten or more, preferably eighteen or more, oscillation vertical modes each having a differential value of 10 dB or less relative to the maximum light intensity of the oscillation vertical mode.;COPYRIGHT: (C)2004,JPO
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