A detailed description of the invention to reduce the damage in the semiconductor capacitor container

摘要

Semiconductor container capacitor structures having a diffusion barrier layer for reducing damage from species to diffuse through the insulating material surrounding the transistor and the underlying bottom cell plates, are suitable for use in high-density memory array. Access transistor pretreatment of the capacitor dielectric layer, forming processing of the capacitor dielectric layer, the bottom cell plate in the post-treatment of the capacitor dielectric layer, the lower layer, further, a diffusion barrier layer protects the surface of the insulating layer around. It can prevent the diffusion of species undesirable as damaging the underlying transistor oxygen containing species, a hydrogen-containing species such as bottom plate, a diffusion barrier layer, or interfere. Diffusion barrier layer is formed separately from the capacitor dielectric layer. Thus, since the diffusion protection dielectric layer is not required, it is possible to thin the dielectric layer. It is possible by reducing the thickness of the dielectric layer and increase the value of the capacitance for a given surface area capacitor.