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Growth of ultra-thin nitride on Si (100) by rapid thermal N2 treatment
Growth of ultra-thin nitride on Si (100) by rapid thermal N2 treatment
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机译:快速N2热处理在Si(100)上生长超薄氮化物
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摘要
A silicon containing wafer is heated in a rapid thermal processing (RTP) system in a nitrogen containing gas to a temperature an time where a thin oxide film on the wafer surface at least partially decomposes and a thin nitride or oxynitride film grows.
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