首页> 外国专利> ITO sputtering target for tin oxide powder, method of manufacturing the same powder, method of manufacturing the same target and the ITO film for forming a sintered sputtering target

ITO sputtering target for tin oxide powder, method of manufacturing the same powder, method of manufacturing the same target and the ITO film for forming a sintered sputtering target

机译:用于氧化锡粉末的ITO溅射靶,制造该粉末的方法,制造相同靶的方法以及用于形成烧结溅射靶的ITO膜

摘要

ITO sputtering target for tin oxide, characterized in that it is in the range of particle size of 90% as determined from the particle size distribution median diameter was determined from the particle size distribution is in a range of 0.40~1.0μm is 3.0μm or less powder. And there is provided an ITO film forming sputtering target was sintered in a powder and tin oxide powder can be obtained a sintered body excellent in uniformity of the components with a suitable densification ITO thin film formation, To provide a low-cost indium oxide target - ITO film forming tin oxide which can suppress the deterioration of film quality and the accompanying nodules, etc., that occur in ITO thin film formation by this.
机译:一种用于氧化锡的ITO溅射靶,其特征在于,其在由粒径分布确定的90%的粒径范围内,由粒径分布确定在0.40〜1.0μm的范围内为3.0μm或少粉。并且提供了一种将ITO成膜溅射靶烧结成粉末,并且能够以合适的致密化ITO薄膜的形成来获得氧化锡粉末,该烧结体的成分均匀性优异,从而提供了低成本的氧化铟靶。由此,能够抑制在ITO薄膜的形成中产生的膜质及伴随的结节等的劣化的ITO膜形成用氧化锡。

著录项

  • 公开/公告号JPWO2002072912A1

    专利类型

  • 公开/公告日2004-07-02

    原文格式PDF

  • 申请/专利权人 株式会社日鉱マテリアルズ;

    申请/专利号JP20020571957

  • 发明设计人 栗原 敏也;古仲 充之;

    申请日2002-02-15

  • 分类号C04B35/457;C04B35/622;C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-21 23:24:35

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