首页> 外国专利> Anion source, ion beam analytical instrument and etching device, oxygen radical generator and exhaust gas central processing unit

Anion source, ion beam analytical instrument and etching device, oxygen radical generator and exhaust gas central processing unit

机译:阴离子源,离子束分析仪和蚀刻装置,氧自由基发生器和废气中央处理单元

摘要

PROBLEM TO BE SOLVED: To provide a negative ion source, an ion beam analysis device, an etching device, an oxygen radical generation device and an waste gas processor which can attain a large ion current by generating a surface-like negative ions by utilization of diamond semi-conductor device structure, with a diamond serving as a semi-conductor. ;SOLUTION: A negative ion source comprises: a diamond layer; a low resistance diamond layer which has a lower resistance than that of the diamond layer and is connected to the diamond layer; an electrode 3 which is formed on a surface where the low resistance layer in the diamond layer is not connected; a surface electrode 4 which can transmit a negative ion 12 formed on a surface that is not connected to the diamond layer in the low resistance diamond layer; and an extraction electrode 9 which is disposed in a thickness direction of the diamond layer at a distance from the surface electrode 4.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种负离子源,一种离子束分析装置,一种蚀刻装置,一种氧自由基产生装置和一种废气处理器,它们可以通过利用表面活性剂产生表面状的负离子来获得大的离子流。金刚石半导体器件的结构,其中金刚石用作半导体。 ;解决方案:负离子源包括:金刚石层;低电阻金刚石层,其电阻比金刚石层的电阻低,并且连接到金刚石层;电极3形成在未连接金刚石层中的低电阻层的表面上。表面电极4,该表面电极4能够透射形成在低电阻金刚石层中未与金刚石层连接的表面上的负离子12。引出电极9,其在金刚石层的厚度方向上距表面电极4一定距离地设置。版权所有:(C)2000,JPO

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号