HCl, H2, and Cl2 Radical-Beam Ion-Beam Etching of Al(x)Ga(1-x)As Substrates withVarying Al Mole Fraction

摘要

The possible benefits of H* radicals on dry etching characteristics of AlGaAswere explored using HCl and separately mixed H2 and Cl2 radical-beam ion-beam etching. H* Radicals strongly affect the Cl*AlGaAs surface chemistry resulting in large changes in etch rate and surface morphology. Etch rates were measured in situ by reflectance interferometry using a quarter-wavelength structure with varying Al(x)Ga(1-x)As mole fraction. The presence of H* (from HCl or H2 added to Cl2) increases the Cl* etch rate threefold. An increase in surface roughness with H* (compared to C1* alone) is correlated with increased Al content.... Optoelectronics, Vertical cavity surface-emitting lasers, MBE Growth.