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Makes the formation of the metal chemical compound thin film whose bulky dorotsupuretsuto is little possible the arc type ion plating device
Makes the formation of the metal chemical compound thin film whose bulky dorotsupuretsuto is little possible the arc type ion plating device
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机译:形成大型的dorotsupuretsuto可能性很小的金属化合物薄膜的电弧型离子镀装置
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摘要
PROBLEM TO BE SOLVED: To form a metallic compd. thin film small in coarse droplet number by an arc type ion plating method. ;SOLUTION: At the time of forming a metallic compd. thin film 6 by an arc type ion plating method in which a metallic particle group is vaporized from the surface of a metallic target 2 by arc discharge, this vaporized metallic particle group is converged by the magnetic force of ring-shaped electromagnets conentrically arranged along the outer circumference of the metallic target, is allowed to react with an atmospheric gas while passing through the inside of a vacuum chamber 1 and is deposited on the surface of a substrate, as the ring-shaped electromagnets, a primary ring-shaped electromagnet 4 is used, adjacently to this primary ring-shaped electromagnet, a secondary ring-shaped electromagnet A is concentrically disposed at a prescribed interval, by the magnetic force of this secondary ring-shaped electromagnet, coarse particles among the vaporized metallic particles group converged by the primary ring- shaped electromagnet are made fine, and the rectifying of the sizes of the evaporated metallic particle group is executed.;COPYRIGHT: (C)2000,JPO
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