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Makes the formation of the metal chemical compound thin film whose bulky dorotsupuretsuto is little possible the arc type ion plating device

机译:形成大型的dorotsupuretsuto可能性很小的金属化合物薄膜的电弧型离子镀装置

摘要

PROBLEM TO BE SOLVED: To form a metallic compd. thin film small in coarse droplet number by an arc type ion plating method. ;SOLUTION: At the time of forming a metallic compd. thin film 6 by an arc type ion plating method in which a metallic particle group is vaporized from the surface of a metallic target 2 by arc discharge, this vaporized metallic particle group is converged by the magnetic force of ring-shaped electromagnets conentrically arranged along the outer circumference of the metallic target, is allowed to react with an atmospheric gas while passing through the inside of a vacuum chamber 1 and is deposited on the surface of a substrate, as the ring-shaped electromagnets, a primary ring-shaped electromagnet 4 is used, adjacently to this primary ring-shaped electromagnet, a secondary ring-shaped electromagnet A is concentrically disposed at a prescribed interval, by the magnetic force of this secondary ring-shaped electromagnet, coarse particles among the vaporized metallic particles group converged by the primary ring- shaped electromagnet are made fine, and the rectifying of the sizes of the evaporated metallic particle group is executed.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:形成金属复合物。通过电弧型离子镀法形成的液滴数少的薄膜。 ;解决方案:在形成金属压块时。通过电弧型离子镀法形成的薄膜6,其中通过电弧放电从金属靶材2的表面汽化金属颗粒组,该汽化的金属颗粒组通过沿环形电极均匀地排列的环形电磁体的磁力而会聚。使金属靶的外周在通过真空室1的内部时与大气反应,并沉积在基板的表面上,作为环形电磁体,初级环形电磁体4为环形。使用时,在该一次环状电磁体的附近,通过该二次环状电磁体的磁力,以规定的间隔同心地配置有二次环状电磁体A。将环形电磁体做得很细,然后对蒸发的金属颗粒组的大小进行校正。电话:(C)2000,日本特许厅

著录项

  • 公开/公告号JP3514127B2

    专利类型

  • 公开/公告日2004-03-31

    原文格式PDF

  • 申请/专利权人 三菱マテリアル株式会社;

    申请/专利号JP19980203275

  • 发明设计人 佐藤 和則;

    申请日1998-07-17

  • 分类号C23C14/32;

  • 国家 JP

  • 入库时间 2022-08-21 23:23:35

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