Static ram, and its defective relief method

摘要

PROBLEM TO BE SOLVED: To provide an SRAM in which a failed memory cell can be saved as a good memory cell by providing means for increasing current of a memory cell when a decision is made that high temperature or low temperature data is not retained well because of insufficient current supply from a power supply. SOLUTION: A high resistance load type static random access memory comprises a series circuit of a resistor 5' and a switching element SW3 connected in parallel with a high resistance load R5, and a series circuit of a resistor 6' and a switching element SW4 connected in parallel with a high resistance load R6. An L level (GND) is fed to the control input of the switching elements SW3, SW4 by cutting the fuse element FU 2 of a control circuit CC2 by means of laser, or the like, and the switching element SW3, SW4 are turned on constantly thus connecting the resistor 5' (R6') in parallel with the high resistance load R5 (R6). Consequently, current supply from a power supply Vcc increases to eliminate insufficient retaining of high temperature or low temperature data thus saving the memory cell.