Static ram, the ON test method, and its defective relief manner

摘要

PROBLEM TO BE SOLVED: To provide an SRAM a data retention failure of which because of a leak current at a junction or a leak current at an off time can be tested at room temperatures, which can be relieved from the data retention failure to a good product, and moreover, a current value of which can be reduced to decrease a power consumption when a fed current from a power source is larger than required. SOLUTION: In a static random access memory of a high resistance load type are set first resistors R7', R8' connected in series to high resistance loads R7, R8 and first switching elements SW5, SW6 connected in parallel to the first resistors R7', R8'. Series circuits of second resistors R7", R8" and the second switching elements SW7, SW8 are connected in parallel to the high resistance loads R7, R8.