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Non-volatile memory cell sensing circuit, particularly for low power supply voltages and high capacitive load values
Non-volatile memory cell sensing circuit, particularly for low power supply voltages and high capacitive load values
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机译:非易失性存储单元感测电路,特别适用于低电源电压和高容性负载值
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摘要
A sensing circuit for a memory cell includes a first bias current generator connected between a first voltage reference and a first inner circuit node, and a second reference current generator connected to the first voltage reference. A comparator having a first input terminal is connected to a comparison circuit node that is connected to the second reference current generator, a second input terminal is connected to a circuit node that is connected to the first inner circuit node, and an output terminal forms an output terminal of the sensing circuit. A cascode-configured bias circuit is connected between the inner circuit node and a matching circuit node. The cascode-configured bias circuit is also connected to a second voltage reference. A current/voltage conversion stage is connected to the matching circuit node, to the comparison circuit node, and to a third voltage reference.
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