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Voltage boosting circuit and method of generating boosting voltage, capable of alleviating effects of high voltage stress

机译:能够减轻高压应力影响的升压电路和产生升压的方法

摘要

A voltage boosting circuit and a method of generating a boosting voltage alleviate deterioration of a driver transistor caused by high voltage stress when the level of an external supply voltage is high. The voltage boosting circuit includes boosting capacitors and switches. The boosting capacitors include a first boosting capacitor connected to a driving node and a last boosting capacitor that outputs the boosting voltage. The switches connect the boosting capacitors in series in response to a control signal. The boosting voltage increases or decreases as the voltage level at the driving node changes according to the logic state of a boosting level control signal. The boosting level control signal is responsive to the external supply voltage level. An external supply voltage detector detects the level of external supply voltage level and generates the boosting level control signal.
机译:当外部电源电压的电平高时,升压电路和产生升压电压的方法减轻了由高电压应力引起的驱动器晶体管的劣化。升压电路包括升压电容器和开关。升压电容器包括连接到驱动节点的第一升压电容器和输出升压电压的最后升压电容器。开关响应于控制信号而串联连接升压电容器。随着驱动节点处的电压电平根据升压电平控制信号的逻辑状态而改变,升压电压增大或减小。升压电平控制信号响应于外部电源电压电平。外部电源电压检测器检测外部电源电压电平并产生升压电平控制信号。

著录项

  • 公开/公告号US2004183586A1

    专利类型

  • 公开/公告日2004-09-23

    原文格式PDF

  • 申请/专利权人 LEE SEUNG-HOON;SIM JAE-YOON;

    申请/专利号US20030732826

  • 发明设计人 SEUNG-HOON LEE;JAE-YOON SIM;

    申请日2003-12-09

  • 分类号G05F3/02;

  • 国家 US

  • 入库时间 2022-08-21 23:22:10

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