首页> 外国专利> Use of irregularly shaped conductive filler features to improve planarization of the conductive layer while reducing parasitic capacitance introduced by the filler features

Use of irregularly shaped conductive filler features to improve planarization of the conductive layer while reducing parasitic capacitance introduced by the filler features

机译:使用不规则形状的导电填充物特征来改善导电层的平面化,同时减少填充物特征引入的寄生电容

摘要

A fabricated multiple layer integrated circuit in which adequate planarization is accomplished using irregularly shaped and properly spaced conductive filler features that are spaced in such a way that capacitive coupling of the conductive filler features with the active conductive regions is reduced. The overall layout area of the conductive filler features is reduced to thereby reduce capacitive coupling with active conductive above and below. In addition, a relatively small edge of the feature is closest to the active conductive in the same conductive layer thereby further reducing capacitive coupling.
机译:一种制造的多层集成电路,其中使用不规则形状和适当间隔的导电填料特征来实现足够的平坦化,所述不规则形状和适当间隔的导电填料特征以减小导电填料特征与有源导电区域的电容耦合的方式隔开。减小了导电填充物特征的总体布局面积,从而减少了与上方和下方的有源导体的电容耦合。另外,特征的相对较小的边缘在同一导电层中最靠近有源导体,从而进一步减小了电容耦合。

著录项

  • 公开/公告号US2004140484A1

    专利类型

  • 公开/公告日2004-07-22

    原文格式PDF

  • 申请/专利权人 AMI SEMICONDUCTOR INC.;

    申请/专利号US20030348093

  • 发明设计人 MARK MICHAEL NELSON;

    申请日2003-01-21

  • 分类号H01L27/10;H01L23/48;H01L23/52;H01L29/40;

  • 国家 US

  • 入库时间 2022-08-21 23:22:03

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号