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Platen design for improving edge performance in CMP applications

机译:压板设计可提高CMP应用中的边缘性能

摘要

An invention is disclosed for improving edge performance in a chemical mechanical polishing process is disclosed. The system includes a wafer head disposed above a wafer, where the wafer head includes a first active retaining ring capable of extension and retraction. Below the wafer head is a polishing belt, and disposed below the polishing belt is a platen having a second active retaining ring capable of extension and retraction. During operation the first active retaining ring and the second active retaining ring can be controlled to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.
机译:公开了一种用于在化学机械抛光工艺中改善边缘性能的发明。该系统包括设置在晶片上方的晶片头,其中晶片头包括能够延伸和缩回的第一有源保持环。在晶片头下方是抛光带,并且在抛光带下方设置有压板,该压板具有能够延伸和缩回的第二有源固定环。在操作过程中,可以控制第一主动挡环和第二主动挡环以提供对抛光带的位置控制,从而调节和控制晶片边缘的去除率。

著录项

  • 公开/公告号US6776695B2

    专利类型

  • 公开/公告日2004-08-17

    原文格式PDF

  • 申请/专利权人 LAM RESEARCH CORPORATION;

    申请/专利号US20000747828

  • 发明设计人 ALEK OWCZARZ;JOHN BOYD;ROD KISTLER;

    申请日2000-12-21

  • 分类号B24B10/00;

  • 国家 US

  • 入库时间 2022-08-21 23:20:29

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