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Nonvolatile semiconductor memory device of virtual-ground memory array with reliable data reading
Nonvolatile semiconductor memory device of virtual-ground memory array with reliable data reading
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机译:具有可靠数据读取功能的虚拟接地存储阵列的非易失性半导体存储器件
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摘要
A nonvolatile semiconductor memory device includes a virtual-ground memory array which includes a plurality of word lines and a plurality of bit lines, a row decoder which selectively activates one of the word lines, a column decoder which applies a sense potential to one of the bit lines, and couples all the remaining ones of the bit lines to a ground potential, and a sense amplifier which compares an electric current running through the one of the bit lines with a first reference current and a second reference current so as to sense a data state of two memory cells that are connected to the one of the word lines and share the one of the bit lines, the sensed data state including a first state in which both of the two memory cells are “0”, a second state in which both of the two memory cells are “1”, and a third state in which one of the two memory cells is “1” and another of the two memory cells is “0”.
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