Ion doping apparatus, and multi-apertured electrode for the same

摘要

With the object of suppressing dispersion in the dose of ion implantation within a narrow range in a direction orthogonal to the scan direction of a substrate, an ion doping apparatus irradiates the substrate to-be-scanned with ion beams which are drawn out from multi-apertured electrodes (200 in FIG. 2) each being provided with a large number of electrode apertures (210). In electrode aperture groups &agr;, . . . of the multi-apertured electrode (200), each including a plurality of electrode apertures (210), the individual electrode apertures (210) are arranged having positional shifts in the direction Y orthogonal to the scan direction X of the substrate so as to homogenize the doses of ion beam implantations into the substrate by the electrode aperture groups &agr;, . . . .