Bilayer resist lift-off method and intermediate structure for forming a GMR sensor

摘要

A read sensor for a magneto resistive head is formed through the use of a bilayer lift-off mask. According to one embodiment, a release layer is formed on top of a sensor layer. A silicon-containing resist layer is formed over the release layer. The resist layer is patterned according to the desired dimensions of the read sensor. Then, plasma etching, such as oxygen plasma etching, is used to remove the portion of the release layer that is exposed by removal of resist material. The release layer may be etched to undercut the patterned resist layer, or may entirely removed beneath the patterned resist layer to provide a bridge of the resist material. In either case, isotropic plasma etching, anisotropic plasma etching, or some combination thereof may be applied.