Magneto-resistive layer arrangement used in a GMR sensor element, an AMR sensor element or a gradiometer comprises a non-magnetic electrically conducting intermediate layer arranged between magnetic layers, and a hard magnetic layer

摘要

Magneto-resistive layer arrangement comprises a layer sequence (16) with a non-magnetic electrically conducting intermediate layer (13) arranged between at least two magnetic layers (12, 12'); and a hard magnetic layer (15) integrated into the layer arrangement. The hard magnetic layer impinges a region of a boundary surface between the magnetic layer and the intermediate layer. Preferred Features: The internal magnetic field produced by the hard magnetic layer can be kept constant with respect to its strength and direction. The hard magnetic layer is made from Fe, Co or Ni and/or NiFe, CoFe, NiCo or Co. The layer arrangement is connected to a Wheatstone bridge.