CHEMICALLY AMPLIFIED PHOTORESIST AND PROCESS FOR STRUCTURING SUBSTITUENTS USING TRANSPARENCY ENHANCEMENT OF RESIST COPOLYMERS FOR 157 NM PHOTOLITHOGRAPHY THROUGH THE USE OF FLUORINATED CINNAMIC ACID DERIVATIVES

摘要

Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.