Halftone phase shifting photomask and blanks for halftone phase shifting photomask therefor and a method for forming pattern by using the halftone phase shifting photomask

摘要

In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250° C. and 500° C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.