Electroless deposition of cu-in-ga-se film

摘要

A process for depositing copper-indium-gallium-selenide thin films on substrates, including foreign substrates, occurs in a chemical bath that includes a buffer solution and does not require external current as a catalyst. Formation of the chemical bath includes compounds of each of the constituent elements dissolved in deionized water and the addition of pHydrion buffers likewise dissolved. Deposition occurs as a result of the introduction of both a working electrode and a counter electrode. The deposited thin film is further processed through physical vapor deposition of additional indium, gallium, and selenium in order to fine-tune the stoichiometry of the resultant thin film.