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Bi-directional capable bucket brigade circuit

机译:双向有能力的桶式大队电路

摘要

A time delay integration circuit in which a number of unit cell inputs (101, 103, 105, 107) along with their respective switches (170, 171, 172, 173) are input to a bi-directional BBD circuit (110). The BBD circuit performs an SCA TDI with reduced ROIC circuitry and compatibility with standard LSI processing. The bi-directional BBD circuit has numerous pairs of MOSFETs (111, 112; 113, 114; 115, 116; 117, 118; 119, 120; 121, 122; 123, 124; 125, 126; 127, 128; 129, 130; 131, 132; 133, 134; 135, 136; 137, 138; 139, 140; 141, 142) connected in series and numerous storage capacitors (151, 152,153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163, 164, 165, 166) having one of their terminals respectively connected between each of the MOSFET pairs and the other of their terminals alternately connected to clock phases Ø1 and Ø2. The gates of the MOSFETs in each pair are separated from the clock phases Ø1 and Ø2 and function respectively as screen gate and transfer clock for one direction of charge flow, and as transfer clock and screen gate for the other direction of charge flow. Transfer direction is changed by switching which MOSFET in a pair becomes clocked as a transfer gate and which becomes a screen gate.
机译:一个延时积分电路,其中多个单位单元输入( 101、103、105、107 )以及它们各自的开关( 170、171、172、173 )输入到双向BBD电路( 110 )。 BBD电路执行的SCA TDI具有减少的ROIC电路,并且与标准LSI处理兼容。双向BBD电路具有许多对MOSFET( 111,112; 113,114; 115,116; 117,118; 119,120; 121,122; 123,124; 125,126; 127,128 ; 129,130; 131,132; 133,134; 135,136; 137,138; 139,140; 141,142 )和许多存储电容器( 151,152,153,154, 155、156、157、158、159、160、161、162、163、164、165、166 ),它们的一个端子分别连接在每个MOSFET对之间,另一个端子交替连接到时钟相位Ø 1 和Ø 2 。每对中的MOSFET的栅极与时钟相位Ø 1 和Ø 2 分开,分别用作屏幕栅极和电荷流向的传输时钟,并作为电荷流向的另一个方向的传输时钟和屏蔽门。通过切换成对的哪个MOSFET时钟作为传输门和哪个成为屏蔽门来改变传输方向。

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