ONO INTERPOLY DIELECTRIC FOR FLASH MEMORY CELLS AND METHOD FOR FABRICATING THE SAME USING A SINGLE WAFER LOW TEMPERATURE DEPOSITION PROCESS

摘要

A method of fabricating a semiconductor device is disclosed. A wafer substrate is provided. A first silicon oxide layer is formed over the wafer substrate. A nitride layer is formed over the first silicon oxide layer using a low temperature deposition process. A second silicon oxide layer is formed over the nitride layer. The low temperature process can form a nitride layer for an oxide-nitride-oxide (ONO) dielectric structure at about a temperature of 700 C. By such a process, an ONO dielectric structure can be formed using a low temperature deposition process, which can reduce the thickness of the ONO dielectric structure.