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Magnetic storage medium having improved thermal stability and a magnetic storage device using such a high-density magnetic storage medium

机译:具有改善的热稳定性的磁存储介质和使用这种高密度磁存储介质的磁存储装置

摘要

A magnetic storage medium includes first and second magnetic layers provided on a support substrate such that the first and second magnetic layers have respective first and second magnetizations in an anti-parallel relationship in a state no substantial writing magnetic field is applied. The first and second magnetizations are changed to a parallel relationship when a writing magnetic field is applied to the magnetic storage medium, and the first and second magnetizations are changed to the anti-parallel relationship as a result of a magnetic reversal caused in the second magnetic layer with diminishing of the writing magnetic field. The reversal is caused as a result of the action of a reversing magnetic field that dominates before the writing magnetic field is diminished and becomes zero.
机译:磁存储介质包括设置在支撑基板上的第一磁性层和第二磁性层,使得第一磁性层和第二磁性层在没有施加实质性写入磁场的状态下具有反平行关系的第一磁性和第二磁性。当将写入磁场施加到磁存储介质时,第一磁化强度和第二磁化强度变为平行关系,并且由于第二磁性体中的磁反转,第一磁化强度和第二磁化强度变为反平行关系。写入磁场减小的磁层。反向是由于反向磁场的作用导致的,该反向磁场在写入磁场减小并变为零之前占主导地位。

著录项

  • 公开/公告号US6773833B2

    专利类型

  • 公开/公告日2004-08-10

    原文格式PDF

  • 申请/专利权人 FUJITSU LIMITED;

    申请/专利号US20010809527

  • 申请日2001-03-15

  • 分类号G11B56/60;G11B57/00;G11B50/12;H01F10/00;

  • 国家 US

  • 入库时间 2022-08-21 23:16:28

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