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Photoresist adhesion improvement on metal layer after photoresist rework by extra N2O treatment
Photoresist adhesion improvement on metal layer after photoresist rework by extra N2O treatment
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机译:通过额外的N2O处理,在光致抗蚀剂返工后提高了金属层上的光致抗蚀剂附着力
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摘要
A method of improving photoresist adhesion in a reworked device, including the following steps. A semiconductor structure having an upper exposed metal layer is provided. An ARC layer is formed over the upper exposed metal layer. The ARC layer having an upper surface. A first photoresist layer is formed upon the ARC layer. The first photoresist layer is removed by a rework process. The ARC layer upper surface is roughened to form a roughened ARC layer upper surface. A second photoresist layer is formed upon the roughened ARC layer upper surface whereby adhesion of the second photoresist layer to the ARC layer is improved.
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