首页>
外国专利>
SEM inspection and analysis of patterned photoresist features
SEM inspection and analysis of patterned photoresist features
展开▼
机译:SEM检查和图案化光刻胶特征分析
展开▼
页面导航
摘要
著录项
相似文献
摘要
A process for improving the accuracy of critical dimension measurements of features patterned on a photoresist layer using a scanning electron microscope (SEM) is disclosed herein. The process includes providing an electron beam to the photoresist layer and transforming the surface of the photoresist layer before the SEM inspection. The surface of the photoresist layer is transformed to trap the outgassing volatile species and dissipates built up charge in the photoresist layer, resulting in SEM images without poor image contrast.
展开▼